CWDM305N TR13 PBFREE

CWDM305N SURFACE MOUNT SILICON N-CHANNEL ENHANCEMENT-MODE MOSFET w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CWDM305N is a high current N-channel enhancement-mode silicon MOSFET designed for high speed pulsed amplifier and driver applications. This energy efficient MOSFET offers beneficially low rDS(ON), low gate charge, and low threshold voltage. MARKING CODE: C305N SOIC-8 CASE APPLICATIONS: • Load/Power switches • DC-DC converter circuits • Power management FEATURES: • Low rDS(ON) • High current • Low gate charge MAXIMUM RATINGS: (TA=25°C) Drain-Source Voltage SYMBOL VDS VGS 30 UNITS V 20 V Continuous Drain Current (Steady State) ID 5.8 A Maximum Pulsed Drain Current, tp=10μs IDM PD 23.2 A 2.0 W TJ, Tstg ΘJA -55 to +150 °C 62.5 °C/W Gate-Source Voltage Power Dissipation Operating and Storage Junction Temperature Thermal Resistance ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted) SYMBOL TEST CONDITIONS MIN TYP IGSSF, IGSSR VGS=20V, VDS=0 IDSS VDS=30V, VGS=0 BVDSS VGS(th) rDS(ON) rDS(ON) gFS VGS=0, ID=250μA VGS=VDS, ID=250μA MAX 100 UNITS nA 1.0 μA 30 V 1.0 VGS=10V, ID=2.9A VGS=5.0V, ID=2.9A 0.024 3.0 V 0.030 Ω 0.028 Ω VDS=5.0V, ID=5.8A VDS=10V, VGS=0, f=1.0MHz 12 50 58 pF VDS=10V, VGS=0, f=1.0MHz VDS=10V, VGS=0, f=1.0MHz 500 560 pF 52 90 pF VDD=15V, VGS=5.0V, VDD=15V, VGS=5.0V, ID=5.8A 4.2 6.3 nC 0.9 1.4 nC 1.4 2.1 nC ton ID=5.8A VDD=15V, VGS=5.0V, ID=5.8A VDD=15V, ID=5.8A, RG=10Ω 6.5 ns toff VDD=15V, ID=5.8A, RG=10Ω 8.5 ns Crss Ciss Coss Qg(tot) Qgs Qgd S R4 (26-April 2021) CWDM305N SURFACE MOUNT SILICON N-CHANNEL ENHANCEMENT-MODE MOSFET SOIC-8 CASE - MECHANICAL OUTLINE SYMBOL A B C D E F G H J K PIN CONFIGURATION LEAD CODE: 1) Source 5) 2) Source 6) 3) Source 7) 4) Gate 8) DIMENSIONS INCHES MILLIMETERS MIN MAX MIN MAX 0.055 0.061 1.392 1.554 0.004 0.009 0.100 0.224 0.016 0.035 0.40 0.90 0.007 0.010 0.19 0.25 0.145 0.157 3.80 4.00 0.189 0.198 4.80 5.00 0.150 3.81 0.228 0.244 5.80 6.20 0.013 0.020 0.33 0.51 0.050 1.27 SOIC-8 (REV: R1) SUGGESTED MOUNTING PADS (Dimensions in mm) Drain Drain Drain Drain MARKING CODE: C305N R4 (26-April 2021) w w w. c e n t r a l s e m i . c o m CWDM305N SURFACE MOUNT SILICON N-CHANNEL ENHANCEMENT-MODE MOSFET TYPICAL ELECTRICAL CHARACTERISTICS R4 (26-April 2021) w w w. c e n t r a l s e m i . c o m OUTSTANDING SUPPORT AND SUPERIOR SERVICES PRODUCT SUPPORT Central’s operations team provides the highest level of support to insure product is delivered on-time. • Supply management (Customer portals) • Custom bar coding for shipments • Inventory bonding • Custom product packing • Consolidated shipping options DESIGNER SUPPORT/SERVICES Central’s applications engineering team is ready to discuss your design challenges. Just ask. • Free quick ship samples (2nd day air) • Special wafer diffusions • Online technical data and parametric search • PbSn plating options • SPICE models • Package details • Custom electrical curves • Application notes • Environmental regulation compliance • Application and design sample kits • Customer specific screening • Custom product and package development • Up-screening capabilities REQUESTING PRODUCT PLATING 1. If requesting Tin/Lead plated devices, add the suffix “ TIN/LEAD” to the part number when ordering (example: 2N2222A TIN/LEAD). 2. If requesting Lead (Pb) Free plated devices, add the suffix “ PBFREE” to the part number when ordering (example: 2N2222A PBFREE). CONTACT US Corporate Headquarters & Customer Support Team Central Semiconductor Corp. 145 Adams Avenue Hauppauge, NY 11788 USA Main Tel: (631) 435-1110 Main Fax: (631) 435-1824 Support Team Fax: (631) 435-3388 www.centralsemi.com Worldwide Field Representatives: www.centralsemi.com/wwreps Worldwide Distributors: www.centralsemi.com/wwdistributors For the latest version of Central Semiconductor’s LIMITATIONS AND DAMAGES DISCLAIMER, which is part of Central’s Standard Terms and Conditions of sale, visit: www.centralsemi.com/terms w w w. c e n t r a l s e m i . c o m (001)